IGBT MODULE, 2X1200V
 Transistor Polarity: N Channel
 DC Collector Current: 270A
 Collector Emitter Voltage Vces: 2.15V
 Collector Emitter Voltage V(br)ceo: 1.2V
 Operating Temperature Range: -40°C to +150°C
 Transistor Case Style: SEMiX 2s
 No. of Pins: 14
 SVHC: No SVHC (18-Jun-2012)
 Av Current Ic: 270A
 Current Ic Continuous a Max: 270A
 Forward Surge Current Ifsm Max: 1000A
 Module Configuration: Dual
 Package / Case: SEMiX 2s
 Pulsed Current Icm: 400A
 Repetitive Reverse Voltage Vrrm Max: 1.2kV
 Rise Time: 45ns
 Termination Type: Screw
 Voltage Vces: 1.2kV