Manufacturer:    Infineon    
Product Category:    IGBT Modules    
RoHS:     Details    
Product:    IGBT Silicon Modules    
Configuration:    Dual    
Collector- Emitter Voltage VCEO Max:    1200 V    
Collector-Emitter Saturation Voltage:    2.1 V    
Continuous Collector Current at 25 C:    205 A    
Gate-Emitter Leakage Current:    400 nA    
Power Dissipation:    835 W    
Maximum Operating Temperature:    + 125 C    
Package / Case:    34MM    
Maximum Gate Emitter Voltage:    +/- 20 V    
Minimum Operating Temperature:    - 40 C    
Mounting Style:    Screw    
Factory Pack Quantity:    500