Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 205 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 835 W
Maximum Operating Temperature: + 125 C
Package / Case: 34MM
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 500
BSM100GB120DLCK
- Markalar INFINEON
- Ürün Kodu: BSM100GB120DLCK
- Stok Durumu: 2 - 3 Hafta içinde
-
145,00TL
Etiketler: BSM100GB120, BSM100GB120D, BSM100GB120DL, BSM100GB120DLC, BSM100GB120DLCK