TIM7785-60SL ICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET
・HIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz
・HIGH GAIN
G1dB= 7.5dB at 7.7GHz to 8.5GHz
・LOW INTERMODULATION DISTORTION
IM3(MIN.)= -45dBc at Pout= 36.5dBm (Single Carrier Level)
・HERMETICALLY SEALED PACKAGE